دیتاشیت STQ1HN60K3-AP

STQ1HN60K3-AP

مشخصات دیتاشیت

نام دیتاشیت STQ1HN60K3-AP
حجم فایل 1209.601 کیلوبایت
نوع فایل pdf
تعداد صفحات 14

دانلود دیتاشیت STQ1HN60K3-AP

STQ1HN60K3-AP Datasheet

مشخصات

  • Manufacturer: STMicroelectronics
  • Series: SuperMESH3™
  • Packaging: Cut Tape (CT)
  • Part Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 600V
  • Current - Continuous Drain (Id) @ 25°C: 400mA (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 10V
  • Rds On (Max) @ Id, Vgs: 8Ohm @ 600mA, 10V
  • Vgs(th) (Max) @ Id: 4.5V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
  • Vgs (Max): ±30V
  • Input Capacitance (Ciss) (Max) @ Vds: 140pF @ 50V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-92-3
  • Package / Case: TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
  • Base Part Number: STQ1
  • detail: N-Channel 600V 400mA (Tc) 3W (Tc) Through Hole TO-92-3

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